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设计了一种可修调的高精度、低温漂、高电源电压抑制比的高阶温度补偿带隙基准电压源。在Brokaw型带隙基准电路结构的基础上,采用多晶硅电阻负温度系数补偿技术,可实现2阶曲率温度补偿,减小了基准电压的温漂;设计了电阻修调网络,保证了基准电压的高精度。电路基于标准双极工艺进行设计和制造,测试结果表明:在-55℃~125℃温度范围内,15V电源电压下,基准源输出电压为2.5(1±0.24%)V,温度系数为1.2×10-5/℃,低频时的电源电压抑制比为-102dB,静态电流为1mA,重载时输出电流能力为10mA。
A high-order temperature compensated bandgap voltage reference with high accuracy, low temperature drift and high supply voltage rejection ratio is designed. Based on the structure of Brokaw bandgap reference circuit, the polycrystalline silicon negative temperature coefficient compensation technique is used to compensate the temperature of the second-order curvature and reduce the temperature drift of the reference voltage. The resistor trimming network is designed to ensure that the reference voltage High precision. The circuit is designed and manufactured based on the standard bipolar process. The test results show that the output voltage of the reference source is 2.5 (1 ± 0.24%) V at a voltage of -15 ° C and the temperature coefficient is 1.2 × 10-5 / ℃, low frequency power supply voltage rejection ratio of -102dB, quiescent current of 1mA, heavy current output current capability of 10mA.