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报道了紫外照射诱导体外培养的 He L a细胞凋亡的研究结果 ,对亚致死低温处理增强紫外照射诱导细胞凋亡的可能性进行了探讨 .结果显示 :He L a细胞经紫外线照射 10 min后培养 6 h,细胞凋亡指数明显升高 ,并于照射后 30～ 36 h达到高峰 (44 .82 %～ 70 .97% ) .荧光显微镜下观察可见细胞核固缩、碎裂 ,DNA凝胶电泳出现特征型的梯状图谱 ;低温处理后立即照射 ,可明显增加细胞凋亡指数 .但此效应是暂时性的 ,将 4℃处理了 12 h的细胞恢复于 37℃培养 2 4h再行照射 ,细胞凋亡指数与纯照射组相比并无明显改变 (P>0 .0 5 ) .
The results of UV irradiation-induced apoptosis of He L a cells in vitro were reported, and the possibility of sub-lethal hypothermic treatment enhancing UV irradiation-induced apoptosis was investigated. The results showed that He L a cells were irradiated with ultraviolet rays for 10 min. After 6 h of culture, the apoptosis index increased significantly and peaked at 30 to 36 h after irradiation (44.82% to 70.97%). Nuclear condensation, fragmentation, and DNA gel electrophoresis were observed under fluorescent microscope. There is a characteristic ladder pattern; irradiation immediately after low temperature treatment can significantly increase the apoptotic index. However, this effect is temporary, and the cells treated at 4°C for 12 hours are restored to 37°C for 24 hours and then irradiated. The apoptotic index did not change significantly compared with the pure irradiation group (P>0.05).