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获得大面积的组成均匀的高质量HgCdTe外延材料是光伏型红外焦平面列阵探测器(FPA)制备的关键问题。HgCdTe液相外延(LPE)制备技术是现今HgCdTe红外探测器工业所使用的主流技术。从80年代开始,人们研究发展了HgCdTe材料的分子束外延(MBE)技术。大量研究表明,MBE HgCdTe材料具有更好的表面形貌、更好的外延层组成和厚度均匀性,以及更好的组成x值和电学参数控制能力等优点。MBE HgCdTe材料性能以及所制备的探测器水平已经达到与LPE HgCdTe材料相媲美的水平。MBE HgCdTe技术与LPE技术相比,除具备低温、超高真空生长环境等优点外,还具有在异质衬底材料上制备HgCdTe材料的能力,有助于解决外延层与Si信号处理电路的热失配以及高质量、大面积碲锌镉衬底
Obtaining a large area homogeneous HgCdTe epitaxial material is a key issue in the preparation of a photovoltaic infrared focal plane array detector (FPA). HgCdTe liquid-phase epitaxy (LPE) fabrication technology is the mainstream technology used in the HgCdTe infrared detector industry today. Since the 1980s, molecular beam epitaxy (MBE) technology has been developed for HgCdTe materials. Numerous studies have shown that MBE HgCdTe materials have better surface morphology, better epitaxial layer composition and thickness uniformity, and better compositional x value and electrical parameter control. The performance of MBE HgCdTe materials and the level of detector prepared have reached the level comparable to LPE HgCdTe materials. Compared with the LPE technology, MBE HgCdTe technology not only has the advantages of low temperature and ultra-high vacuum growth environment, but also has the ability of preparing HgCdTe material on the heterogeneous substrate material, which can help to solve the problems of the heat of the epitaxial layer and the Si signal processing circuit Mismatch and high quality, large area tellurium-zinc-cadmium substrate