A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of the drift layer and DMOSFET cell structure of active area. The n-type epilayer is 33 m thick with a doping of 2.5x10 15 cm-3. The devices were fabricated with a floating guard ring edge termination. The drain current Id=D5 A at Vg=D20 V, corresponding to Vd=D2.5 V. A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been designed and fabricated. Numerical simulations have been performed to optimize the parameters of the drift layer and DMOSFET cell structure of the active area. The n-type epilayer is 33 m thick with The drain current Id = D5 A at Vg = D20 V, corresponding to Vd = D2.5 V. The devices were fabricated with a floating guard ring edge termination.