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为探测0.1-50 Me V低能电子脉冲束流的位置分布,研制基于国产厚型气体电子倍增器(Thick Gaseous Electron Multiplier,THGEM)的二维位置探测器,位置分辨要求好于200μm,灵敏面积为50 mm×50 mm。THGEM的孔径为150μm、孔间距400μm、厚度100μm。用Geant4模拟了薄膜窗厚度、空气层厚度等对电子透过率和横向扩散的影响。根据模拟结果,优化了探测器的结构和设计。并用能量为5.9 ke V的X射线源55Fe测试不同工作气体的增益,单层最大增益好于1×10~4,双层最大增益好于6×10~4,能量分辨率好于23%。
In order to probe the location distribution of low-energy pulsed electron current (0.1-50 MeV), a two-dimensional position detector based on THGEM (Thick Gaseous Electron Multiplier) was developed. Its position resolution is better than 200μm and its sensitive area is 50 mm × 50 mm. The aperture of THGEM is 150μm, the distance between holes is 400μm and the thickness is 100μm. Geant4 was used to simulate the influence of film thickness and air layer thickness on the electron transmittance and lateral diffusion. Based on the simulation results, the structure and design of the detector are optimized. The gain of different working gases was tested by 55Fe X-ray source 55Fe. The maximum gain of single layer was better than 1 × 10 ~ 4, the maximum gain of double layer was better than 6 × 10 ~ 4, and the energy resolution was better than 23%.