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成功地将Polyimide钝化平坦化工艺应用于InP/InGaAs单异质结晶体管制作工艺中.在Vce=1.1V,Ic=33.5mA的偏置条件下,发射极尺寸为1.4μm×15μm的器件,其ft达到210GHz.这种器件非常适合高速低功耗方面的应用,例如超高速数模混合电路以及光学通信系统等.
Polyimide passivation planarization process was successfully applied to the fabrication of InP / InGaAs single heterojunction transistor.The devices with emitter size of 1.4μm × 15μm were fabricated under the bias condition of Vce = 1.1V and Ic = 33.5mA, The ft reached 210GHz. This device is ideal for high-speed low-power applications, such as high-speed digital-analog hybrid circuits and optical communications systems.