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摒弃了离子静止假设和飞秒时间尺度内电子、离子的温度概念,以及基于电子、离子温度概念的双温模型,采用动力论的Vlasov方程描述电子、离子在飞秒时间尺度下非平衡态输运过程,建立了飞秒激光辐射材料的Coulomb爆炸微观烧蚀理论模型,并对其进行了数值模拟分析,在此基础上,定量分析了自洽电场导致的材料表面层Coulomb爆炸的机理及飞秒激光参数对材料表面烧蚀的影响,理论模型计算的烧蚀深度与实验吻合的较好,结果表明在绝缘体材料表面层产生的静电自洽电场强度远大于金属材料与半导体材料,绝缘体材料表层更易发生Coulomb爆炸烧蚀现象.
Absent ion rest assumptions and the temperature concepts of electrons and ions in the femtosecond time scale and the dual-temperature model based on the concept of electron and ion temperature, the kinetic Vlasov equation is used to describe the electron and ion non-equilibrium transport at the femtosecond time scale Based on this, a theoretical model of Coulomb explosion micro-ablation of femtosecond laser radiation material was established and its numerical simulation was carried out. On this basis, the mechanism of Coulomb explosion caused by self-consistent electric field and the mechanism of fly- Sec laser parameters on the surface ablation, the ablation depth calculated by the theoretical model is in good agreement with the experiment. The results show that the electrostatic self-consistent electric field intensity on the surface of the insulator material is much larger than that of the metal material and the semiconductor material, the insulator material surface More prone to Coulomb explosion ablation.