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采用固相法分别制备了标准摩尔配比和铅过量10%的两种靶材,并利用脉冲激光沉积技术(PLD)在镧锶铝钽(LaSrAlTaO3,LSAT)单晶衬底上成功制备了锆钛酸铅(Pb(Zr0.3Ti0.7)O3,PZT)铁电薄膜,在550~750℃沉积温度范围内研究了PZT薄膜的生长取向和铅含量对薄膜生长取向的影响。利用X射线衍射(XRD)仪和原子力显微镜(AFM)表征了薄膜生长取向和表面形貌。XRD测量表明在标准摩尔配比情况下薄膜生长从550℃近似c轴取向逐渐过渡到750℃近似a轴取向,而在铅过量情况下薄膜生长取向无明显过渡性变化;AFM测量表明PZT薄膜在近似c轴和a轴生长情况下,表面均方根(RMS)粗糙度分别为16.9 nm和13.7 nm,而在混合生长无择优取向的情况下,薄膜表面均方根粗糙度达到68 nm,这可能是两种取向竞争生长的结果。
Two kinds of target materials with standard molar ratio and 10% excess lead were prepared by solid-state method respectively. Successive preparation of zirconium on LaSrAlTaO3 (LSAT) single crystal substrate by pulsed laser deposition (PLD) (Pb0.3Ti0.7) O3, PZT) ferroelectric thin films, the growth orientation and the lead content of the PZT thin films were studied in the deposition temperature range of 550-750 ℃. The growth orientation and surface morphology of the films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD measurements showed that the film growth proceeded from approximately c-axis orientation of 550 ° C to approximately 750 ° C in the standard a-axis orientation under the standard molar ratio, whereas there was no obvious transitional change in the film growth orientation in the presence of lead excess. The RMS rms of the surface are 16.9 nm and 13.7 nm, respectively, for the growth near the c-axis and the a-axis, whereas the root mean square roughness of the film surface reaches 68 nm in the case of no preferred orientation for mixed growth May be the result of competitive growth of two kinds of orientation.