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在１５Ｋ下测量了ＩｎＡｓ／ＧａＡｓ亚单层结构的静压光致发光，静压范围为０～８ＧＰａ．常压下ＩｎＡｓ层中重空穴激子的发光峰随ＩｎＡｓ层厚的减小向高能移动，同时峰宽变窄，强度减小．其压力行为与ＧａＡｓ基体的基本一致，表明量子阱（线、点）模型仍适用于ＩｎＡｓ／ＧａＡｓ亚单层结构．得到平均厚度为１／３单分子层的样品中由于附加的横向限制效应引起的电子和空穴束缚能的增加分别为２３和４２ｍｅＶ
The static pressure photoluminescence of InAs / GaAs sub-monolayer structure was measured at 15K, and the static pressure range was 0 ~ 8GPa. The luminescence peak of heavy hole excitons in the InAs layer under normal pressure is shifted to high energy with the decrease of the InAs layer thickness, while the peak width is narrowed and the intensity is decreased. The pressure behavior is basically consistent with GaAs matrix, indicating that the quantum well (line, point) model is still suitable for InAs / GaAs sub-monolayer structure. The increase in the electron and hole binding energies in the samples giving an average thickness of 1/3 monolayers resulting from the additional lateral confinement effect was 23 and 42 meV, respectively