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介绍了两种适于毫米波应用的RF MEMS实时延时线的设计。首先,在设计中采用了一种新颖的RF MEMS拓宽调节范围的变容器结构,得到了最大变容比为5.39的在片测试结果。其工艺设计基于表面微机械工艺,采用了由5个掩模版组成的工艺流程。然后,在RF MEMS变容器设计的基础上,完成了用于原理论证的Ka波段RF MEMS实时延时线的仿真设计、工艺流片和在片测试。Ka波段RF MEMS实时延时线的在片测试结果显示,在28GHz时处于下降状态的插入损耗为-2.36dB;两端口在28GHz时的回波损耗都小于-15dB,而在5～40GHz的整个测试频率范围内的回波损耗都小于-10dB。在Ka波段RF MEMS实时延时线设计基础上,60GHz RF MEMS实时延时线的仿真设计已经完成并准备投片。
Two types of RF MEMS real-time delay lines are introduced for millimeter-wave applications. First of all, a novel RF MEMS widening range varactor structure was adopted in the design, and the on-chip test result with a maximum varactor ratio of 5.39 was obtained. The process design is based on the surface micromachining process, using a process flow composed of five reticle. Then, based on the design of RF MEMS varactor, the simulation design, process flow and on-chip test of Ka-band RF MEMS real-time delay line for the principle demonstration are completed. The on-chip test results of the Ka-band RF MEMS real-time delay line show that the insertion loss at -28 dB at 28 GHz is -2.36 dB; the return loss of both ports at 28 GHz is less than -15 dB, while at 5-40 GHz The return loss in the test frequency range is less than -10dB. Based on the Ka-band RF MEMS real-time delay line design, the simulation design of the 60GHz RF MEMS real-time delay line has been completed and is ready for use.