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为了更好地表征GaAs HEMT开关器件的特性,提出了一种基于经验公式的改进型大信号模型。基于0.25μm HEMT工艺制备不同栅指数和单指栅宽的GaAs HEMT开关器件,然后对这些器件进行直流I-V特性和多偏置S参数的测试。采用栅源电流模型、漏源电流模型和电容模型对测试曲线进行拟合,从而得到可定标的GaAs开关大信号模型。对模型的开态插损和关态隔离度进行小信号仿真,模型的仿真结果与测试结果吻合较好,验证了此模型有较高的精准度。通过大信号负载牵引测试验证了模型的有效性,此模型可用于GaAs HEMT开关器件的设计、开发及应用。
In order to better characterize GaAs HEMT switching devices, an improved large-signal model based on empirical formula is proposed. GaAs HEMT switching devices with different gate and gate widths were fabricated based on a 0.25μm HEMT process. The devices were then tested for DC I-V characteristics and multi-bias S-parameters. The gate-source current model, the drain-source current model and the capacitance model are used to fit the test curves to obtain a scalable GaAs switching large-signal model. The simulation results of the model are in good agreement with the test results. The simulation results show that this model has higher accuracy. The model is validated by the large-signal load-pull test. This model can be used in the design, development and application of GaAs HEMT switching devices.