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目的:研究135Hz(电场强度为80V·m-1)极低频电磁场(ELF)暴露对HepG-2细胞内Ca2+浓度的影响。方法:采用荧光探针Fluo-3/AM标记细胞内Ca2+,135HzELF照射HepG-2细胞1h后,利用激光扫描共聚焦显微镜技术测定细胞内Ca2+浓度,加入L-型Ca2+通道拮抗剂硝苯地平,探讨135HzELF影响HepG-2细胞内Ca2+浓度变化的具体机制。结果:未暴露组细胞荧光强度较弱,ELF暴露组细胞荧光强度增高,与未暴露组有统计学意义(P<0.01);用硝苯地平干预组细胞荧光强度减弱,与未干预组有统计学意义(P<0.01)。结论:135HzELF可能通过引起L-型Ca2+通道的开放造成HepG-2细胞发生Ca2+超载。
Objective: To study the effect of ELF exposure at 135Hz (electric field intensity of 80V · m-1) on intracellular Ca2 + concentration in HepG-2 cells. Methods: Fluorescence probe Fluo-3 / AM labeled intracellular Ca2 +, 135HzELF irradiated HepG-2 cells for 1 hour, the use of laser scanning confocal microscopy to measure intracellular Ca2 + concentration, adding L-type Ca2 + channel antagonist nifedipine, To investigate the specific mechanism of 135Hz ELF affecting the intracellular Ca2 + concentration in HepG-2 cells. Results: The fluorescence intensity of cells in unexposed group was weaker, and the fluorescence intensity of ELF exposed group was higher than that in non-exposed group (P <0.01). The fluorescence intensity of cells in nifedipine-treated group was lower than that in non-exposed group Significance (P <0.01). Conclusion: 135HzELF may cause Ca2 + overload in HepG-2 cells by causing the opening of L-type Ca2 + channels.