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采用改进的直接观测法,在425～600℃的温度下确定了HgCdTe三元系富Te角内原始相域的液相等温线。用这些等温线作辅助,确定了在CdTe_(1-y)Se_y衬底上开管液相外延生长Hg_(1-x)Cd_xTe层的条件。在氢气流下用富碲的HgCdTe熔液生长出x值为0.1～0.8的外延层,所用为水平滑块法,该法可防止熔液中汞的蒸发损失。所用生长温度和生长时间分别为450～550℃和0.25～10分钟。生长液的平衡时间在550℃时通常为1小时。使用料源片、过冷熔液和(111)取向的衬底生长出质量极佳的外延层,其厚度在3～15微米之间。用电子微探针分析法测定了外延层的x值,并用所得数据及液相等温线取得了固相线。除电子微探针数据外,还给出了透光率。
The improved direct observation method was used to determine the liquid isotherm in the initial phase of Te-rich HgCdTe ternary system at 425-600 ℃. Assisted by these isotherms, the conditions for the epitaxial growth of the Hg_ (1-x) Cd_xTe layer on the CdTe_ (1-y) Se_y substrate were determined. An epitaxial layer with x-value from 0.1 to 0.8 was grown from a tellurium-enriched HgCdTe melt under a hydrogen flow using a horizontal slide method, which prevents mercury from evaporating in the melt. The growth temperature and growth time used are 450 to 550 ° C and 0.25 to 10 minutes, respectively. The equilibration time of the growth fluid is usually 1 hour at 550 ° C. Using source plates, sub-cooled melt and (111) oriented substrates, an epitaxial layer of excellent quality was grown with a thickness between 3 and 15 microns. The x value of the epitaxial layer was determined by electron microprobe analysis and the solidus was obtained using the obtained data and the liquid isotherm. In addition to the electron microprobe data, the light transmittance is also given.