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传统的电荷耦合器件(CCD)处于强光环境时,会产生光晕现象;纵向溢出漏结构的出现,满足了CCD在强光环境下的使用要求。通过对CCD的纵向溢出漏结构及其电势进行分析,发现抗晕势垒是纵向溢出漏结构能否实现抗晕功能的关键,决定了抗晕能力的强弱,而抗晕势垒受p阱注入剂量、埋沟注入剂量的影响。通过工艺仿真,确定了纵向溢出漏结构的p阱、埋沟工艺条件,根据仿真结果制造的纵向抗晕CCD抗晕能力大于100倍。
The traditional charge-coupled device (CCD) in a bright light environment, will have a halo phenomenon; longitudinal overflow leakage structure to meet the CCD in the light environment requirements. Through analyzing the longitudinal leakage leakage structure of CCD and its potential, it is found that the anti-halo potential barrier is the key to whether anti-halo function can be realized by vertical overflow drain structure, which determines the strength of anti- Implantation dose, the impact of buried ditch injection dose. Through process simulation, the p-well and buried-furrow conditions of the vertical overflow drain structure are determined, and the anti-halo capacity of the longitudinal anti-halo CCD manufactured according to the simulation results is greater than 100 times.