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据日本《电子材料》2003年第5期报道,日本冲电气工业公司日前开发了用于无线通信的GaN—HEMT功率器件。随着无线通信系统通信容量的增加以及多信道化的发展,在系统内要求收发信机的低功耗和高密度化。该公司为了适应新品的要求开发了以SiC为衬底的GaN—HEMT功率器件。该器件的跨导(gm)高达500mS,过去该公司的最高值是327mS,500mS是同类器件中目前世界最高的放大水平。该器件的最大振荡频率(fmax)为126 GHz,截止频率(ft)为67 GHz。
According to Japan’s “Electronic Materials” No. 5 of 2003 reported that Japan’s OKI Industries has developed a GaN-HEMT power devices for wireless communications. With the increase of the communication capacity of the wireless communication system and the development of the multi-channel, low power consumption and high density of the transceiver are required in the system. The company developed SiC-based GaN-HEMT power devices to meet the new requirements. The device’s transconductance (gm) up to 500mS, the company’s highest in the past is 327mS, 500mS is the highest level of amplification devices in the world. The device has a maximum oscillation frequency (fmax) of 126 GHz and a cutoff frequency (ft) of 67 GHz.