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研制了一种张应变准体 In Ga As半导体放大器光开关 .该结构具有显著的带填充效应 ,从而导致在 80 m A的注入电流下 ,器件的 3d B光带宽大于 85 nm(1 5 2 0～ 1 6 0 9nm ) .该带宽几乎同时全部覆盖了 C带 (1 5 2 5～ 1 5 6 5 nm )和L带 (1 5 70～ 1 6 1 0 nm ) .最为重要的是 ,在 3d B光带范围内 ,光开关的偏振灵敏度小于 0 .7d B;光纤到光纤无损工作电流在 70～ 90 m A之间 ;消光比大于 5 0 d B.通过降低了载流子寿命 ,开关速度有所提高 .在未来密集波分复用通信系统中 ,这种宽带偏振不灵敏半导体放大器光开关很有实用前景
A GaAs semiconductor amplifier optical switch has been developed. The structure has a significant band-filling effect, resulting in a device with 3dB optical bandwidth greater than 85 nm at an injection current of 80 mA ~ 1 609nm) .This bandwidth covers the C band (1525 ~ 1565 nm) and the L band (1570 ~ 1610 nm) almost simultaneously.Most importantly, in the 3d B light band, the polarization sensitivity of the optical switch is less than 0 .7d B; fiber to fiber lossless operating current between 70 ~ 90 m A; extinction ratio greater than 5 0 d B. By reducing the carrier lifetime, the switching speed Has been improved in the future Dense Wavelength Division Multiplexing communication system, this wideband polarization insensitive semiconductor amplifier optical switch is very practical