This paper reports that (Ga, Mn)N is prepared using implantation of 3at.% Mn Ions into undoped GaN. Structural characterization of the crystals was performed using x-ray diffraction(XRD). Detailed XRD measurements have revealed the characteristic of Mn-ion implanted GaN with a small contribution of other compounds. With Raman spectroscopy measurements, the spectra corresponding to the intrinsic GaN layers demonstrate three Raman active excitations at 747,733 and 566 cm-1 identified as E1 (LO), A1 (LO) and EH, respectively. The Mn-doped GaN layers exhibit additional excitations at 182, 288, 650-725, 363, 506cm-1 and the vicinity of EH mode. The modes observed at 182, 288, 650-725cm-1 are assigned to macroscopic disorder or vacancy-related defects caused by Mn-ion implantation. Other new phonon modes are assigned to Mnx-Ny, Gax-Mny modes and the local vibrational mode of Mn atoms in the (Ga, Mn)N,which are in fair agreement with the standard theoretical results.