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研究了Co、Mn的不同掺杂形式对低压ZnO压敏电阻显微结构和电性能的影响。发现以Co(NO3 ) 2 、Mn (NO3 ) 2 溶液代替CoO、MnO2 掺杂 ,可以降低压敏电压 ,增大非线性系数。这主要与钴的高价态有关 ,利于压敏电阻的低压化。
The effects of different doping forms of Co and Mn on the microstructure and electrical properties of low-voltage ZnO varistors were investigated. It was found that Co (NO3) 2, Mn (NO3) 2 solution instead of CoO, MnO2 doping, can reduce the voltage-sensitive voltage, increase the nonlinear coefficient. This is mainly related to the high valence state of cobalt, which is conducive to the low pressure of the varistor.