用金属有机物化学气相沉积法(MOCVD)生长了GaAs/AlGaAs量子阱材料,分别制备了300μm×300μm台面,峰值波长8.5μm,外电极压焊点面积80μm×80μm,内电极压焊点面积20μm×20μm的单元测试样品。用变温液氦制冷机测试系统对两个样品进行50～300K的变温测试,分析了器件在不同偏压条件下的暗电流特性。发现该量子阱红外探测器的背景限温度为50K。不同生长次序中GaAs与AlGaAs界面的不对称性,以及掺杂元素的扩散导致了正负偏压下的I/V曲线呈不对成性。探测器电极压焊点面积大小与位置的不同对暗电流有一定的影响。 The GaAs / AlGaAs quantum well material was grown by metal organic chemical vapor deposition (MOCVD) to prepare a 300μm × 300μm mesa with a peak wavelength of 8.5μm, an area of ​​80μm × 80μm on the external electrodes and an area of ​​20μm × 20μm unit test sample. The two samples were subjected to temperature change test of 50 ~ 300K with changing temperature helium refrigerator test system, and the dark current characteristics of the device under different bias conditions were analyzed. The background temperature of the quantum well infrared detector was found to be 50K. The asymmetry of the GaAs-AlGaAs interface in different growth sequences and the diffusion of doping elements lead to the I / V curves being non-logarithmic under positive and negative bias. Detector electrode pressure pad size and location of the different dark current has a certain impact.