本文首次报道了高掺杂沟道的GaAs MIS SB FET.在S.I.GaAs衬底上用离子注入Si,同时形成高浓度、超薄的有源层和欧姆接触区,载流子峰值浓度为 0.5-1×10~(13)cm~(-3).在Al栅和GaAs有源层间有一层用阳极氧化制备的自身氧化膜,厚度10~2A|°.MIS SB FET为双栅器件,栅尺寸 2 × 400 μm. 实验所得 MIS SB FET的夹断电压为4V,零栅偏跨导为 25mS,高于本实验室相似结构常规工艺的 MES FET器件(峰值浓度1-2×10~(17)cm~(-3),没有氧化膜). 在二区间模型基础上,计入薄氧化膜影响,模拟计算了 MIS SB FET的直流和微波特性,并与常规工艺的 MES FET作了比较. In this paper, GaAs MIS SB FET with high channel depth is reported for the first time.Ion Si is implanted into SiGaAs substrate to form high-concentration, ultra-thin active layer and ohmic contact region with peak carrier concentration of 0.5- 1 × 10 ~ (13) cm ~ (-3) .A layer of Al oxide and GaAs active layer is prepared by anodic oxidation of its own oxide film, the thickness of 10 ~ 2A | ° MIS SB FET double gate devices, gate Size 2 × 400 μm. The resulting MIS SB FET has a pinch-off voltage of 4V and a zero-gate span transconductance of 25mS, which is higher than that of MES FET devices with peak current of 1-2 × 10 ~ (17) ) cm ~ (-3), no oxide film.) Based on the bivariate model, the influence of thin oxide film was calculated and the DC and microwave characteristics of MIS SB FET were simulated and compared with those of conventional MES FET.