论文部分内容阅读
为期五天的国际固体电路会议(ISSCC)将要在2月14～18日在美国旧金山Marriott召开。SOI(绝缘体上硅)技术将会成为技术方向会场的热门话题。在会上发表的文章,将介绍SOI器件在性能方面的优点;所介绍的内容将不会再仅仅限于过去作为主要性能优点的抗辐射特性。 前一段时间有不少人认为微处理器性能的提高将达不到Moors定律预期的指标;但是由于铜连接线工艺技
The five-day International Solid State Circuits Conference (ISSCC) will be held February 14 ~ 18 at the San Francisco Marriott. SOI (silicon on insulator) technology will be a hot topic in the technical direction of the venue. An article published at the conference will describe the performance benefits of SOI devices; the introduction will no longer be limited to anti-radiation features that used to be major performance benefits. Some time ago many people think that microprocessor performance will not reach the expected Moors Law indicators; but because of the copper cable technology