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采用光悬浮区熔法以3 mm/h的生长速度制备Gd2PdSi3单晶。该化合物表现为同成分熔融,其熔点在1700°C左右。与Gd2PdSi3化学计量成分相比,制备的晶体中Pd含量略低,导致了熔区内Pd的富集以及实验过程中熔区温度的降低。采用标准成分给料棒制备的单晶内含有少量定向的GdSi沉淀,可以通过退火热处理减少其含量但并不能完全消除。采用给料棒成分微调的方法制备出不含GdSi沉淀的高质量Gd2PdSi3单晶。
Gd2PdSi3 single crystals were prepared by optical suspension zone melting at a growth rate of 3 mm / h. The compound showed the same composition as the melting point of about 1700 ° C. Compared with the stoichiometric composition of Gd2PdSi3, the content of Pd in the prepared crystal is slightly lower, resulting in the enrichment of Pd in the melting zone and the decrease of the melting zone temperature during the experiment. The single crystals prepared with the standard composition feed rods contain small amounts of oriented GdSi precipitates that can be annealed to reduce their content but not completely eliminated. Fine-tuning of the feed rod composition was used to prepare a high quality Gd2PdSi3 single crystal without GdSi precipitation.