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研究了氧掺入Ge Sb Te射频溅射相变薄膜在 40 0nm～ 80 0nm区域的光学常数 (n ,κ)和反射、透射光谱 ,发现适当的氧掺入能大大增加退火前后反射率对比度 ,因此可通过氧掺入改良Ge Sb Te相变材料的光存储性能
The optical constants (n, κ) and the reflection and transmission spectra of oxygen-doped Ge Sb Te RF sputtering films in the 40 0nm ~ 80 0nm region were investigated. It was found that proper incorporation of oxygen can greatly increase the contrast ratio before and after annealing, Thus the optical storage properties of the Ge Sb Te phase change material can be modified by oxygen incorporation