成功研制出非均匀发射极条间距功率SiGe异质结双极晶体管(HBT)用以改善功率器件热稳定性.实验结果表明,在相同的工作条件下,与传统的均匀发射极条间距HBT相比,非均匀结构HBT的峰值结温降低了22K.在不同偏置条件下,非均匀结构SiGeHBT均能显著改善芯片表面温度分布的非均匀性.由于峰值结温的降低以及芯片表面温度分布非均匀性的改善,采用非均匀发射极条间距结构的功率SiGeHBT可以工作在更高的偏置条件下,具有更高的功率处理能力. Successfully developed a non-uniform emitter spacing power SiGe HBT (bipolar transistor) to improve the thermal stability of the power device.Experimental results show that under the same operating conditions, compared with the conventional uniform emitter spacing HBT phase The peak junction temperature of the HBT with non-uniform structure is reduced by 22 K. Under different bias conditions, the non-uniform structure of SiGeHBT can significantly improve the non-uniformity of the temperature distribution on the chip surface.Because the peak junction temperature decreases and the surface temperature distribution of the chip is not The improvement of uniformity, the power SiGeHBT with non-uniform emitter spacing structure can work under higher bias conditions, with higher power handling capability.