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日本松下电器产业中央研究所开发成功新型高分辨率扫描隧道显微镜(STM),可用于下一代超大规模集成电路等领域。松下用这台设备在世界上首次捕捉到硅单晶表面的特异缺陷状态,在原子水平上描绘出了数百纳米范围内的带状缺陷。松下在该仪器中采用场离子显微镜(FIM)装置,使问题得到了解决。研究人员用钨针作为探针,用FIM一边观察一边加工。由于是在10~(11)乇的超高真空下进行测量,因此不会
The Matsushita Electric Industrial Central Research Institute has successfully developed a new high-resolution scanning tunneling microscope (STM) that can be used in the next generation of very large scale integrated circuits and other fields. Matsushita used the device for the first time in the world to capture specific defect states on the silicon single crystal surface and to characterize ribbon defects in the hundreds of nanometers at the atomic level. Panasonic used a field ion microscope (FIM) device in the instrument to solve the problem. The researchers used tungsten needle as a probe, FIM observed while processing. Since it is measured under an ultrahigh vacuum of 10 to (11) Torr, it does not