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新一代的半导体器件,许多都要采用GaAs的调制掺杂构造,或超晶格构造.在这里,如何提高膜厚的控制性,使其一次只成长一分子层,是个关键技术.以前的技术,当温度升高时成长膜厚便超过一分子层,而且随着原料供给量的波动,成长膜厚也随之波动.最近,利用光能的选择性,用有无光照射来控制膜的成长,即使原料供给量和成长温度有某种程度波动,仍能做到每供给一次原料,只长成一分子层.本文将介绍国外在这一方面的最新进展.
A new generation of semiconductor devices, many of which have to use modulation doped GaAs structure, or superlattice structure .Here, how to improve the controllability of the film, so that only one growth layer at a time, is a key technology.Previous techniques , When the temperature increases the film thickness will grow more than a layer, and with the fluctuations in the supply of raw materials, the film thickness will also fluctuate.Recently, the use of light energy selectivity, with or without light irradiation to control the film Growth, even if the supply of raw materials and growth temperature fluctuations to some extent, still can be done for each feed of raw materials, only grow into a sub-layer.This article will introduce the latest developments in this area abroad.