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用射频等离子体辅助分子束外延技术 (RF -MBE)在C面蓝宝石衬底上外延了高质量的GaN膜以及AlGaN/GaN极化感应二维电子气材料 .所外延的GaN膜室温背景电子浓度为 2× 10 17cm-3 ,相应的电子迁移率为 177cm2 /Vs;GaN (0 0 0 2 )X射线衍射摇摆曲线半高宽 (FWHM)为 6arcmin .;AlGaN/GaN极化感应二维电子气材料的室温电子迁移率为 730cm2 /Vs ,相应的电子气面密度为 7.6× 10 12 cm-2 ;用此二维电子气材料制作的异质结场效应晶体管 (HFET)室温跨导达 5 0mS/mm (栅长 1微米 ) ,截止频率达 13 .2 5GHz(栅长 0 .5微米 ) ,可在 30 0℃下工作
High-quality GaN films and AlGaN / GaN polarization induced two-dimensional electron gas materials were epitaxially grown on the C-plane sapphire substrate by radio frequency plasma-assisted molecular beam epitaxy (RF-MBE) And the corresponding electron mobility was 177cm2 / Vs. The full width at half maximum (FWHM) of the X-ray diffraction rocking curve of GaN (0 0 0 2) was 6 arcmin. The polarization of two dimensional electron gas of AlGaN / GaN The room-temperature electron mobility of the material is 730cm2 / Vs and the corresponding electron gas density is 7.6 × 10 12 cm-2. The heterojunction field-effect transistor (HFET) fabricated with this two-dimensional electron gas material has a transconductance of 50 mS / mm (gate length 1 micron), the cut-off frequency of 13.52GHz (gate length 0.5 microns), can work at 30 0 ℃