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利用电子束蒸发技术在玻璃衬底上沉积了Ta掺杂ITO(ITO∶Ta)薄膜,对比研究了在不同退火温度下ITO∶Ta和ITO薄膜表面形貌、方阻、载流子浓度、霍尔迁移率和透光率的变化情况。结果表明,随着退火温度的上升,ITO∶Ta薄膜的晶化程度不断提高,并获得较低的表面粗糙度。在合适的退火温度下,ITO∶Ta薄膜的光电性能也有显著的改善。当在氮气氧气氛围下经过500℃退火时,ITO∶Ta薄膜得到最佳的综合性能,表面均方根粗糙度为2.17 nm,方阻为10～20Ω,在440 nm的透光率可达98.5%。
Ta-doped ITO (ITO: Ta) thin films were deposited on glass substrates by electron beam evaporation. The surface topography, square resistance, carrier concentration, Er mobility and transmittance changes. The results show that with the increase of annealing temperature, the degree of crystallization of ITO: Ta films increases continuously, and the surface roughness is lower. At the proper annealing temperature, the photoelectric properties of the ITO: Ta thin films are also significantly improved. When annealed at 500 ℃ under an atmosphere of nitrogen and oxygen, the ITO: Ta film has the best overall properties. The surface root mean square roughness is 2.17 nm, the square resistance is 10-20 Ω, and the transmittance at 440 nm is 98.5 %.