Hittite微波公司宣布开发出用于点对点、点对多点、甚小孔径终端、军用和太空用途的三款新的GaAs pHEMT中功率放大器芯片。每款放大器为全匹配(50Ω)RF端口,使用一个+5V电源,便于制造多芯片组件和部件。三款功放的工作温度为标准的—55～+85℃温度范围。型号为HMC490的功放为通用中功率低噪声放大器,工作频率12～17GHz,增益 Hittite Microwave Corporation announces the development of three new GaAs pHEMT mid-power amplifier chips for point-to-point, point-to-multipoint, very small aperture termination, military and space applications. Each amplifier is a fully matched (50Ω) RF port, using a +5 V power supply, making it easy to build multichip modules and components. The working temperature of the three amplifiers is the standard -55 ~ +85 ℃ temperature range. Model HMC490 amplifier for the general power low noise amplifier, the operating frequency of 12 ~ 17GHz, gain