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获得了阈值电流低至16mA的激光二极管,激光器长300μm,沟道宽2～3μm,工作波长为1.51μm。该器件由一种液相外延步骤和横向Zn扩散工艺制作,用半绝缘衬底材料实现电流限制。
The laser diode with a threshold current as low as 16mA was obtained. The laser was 300μm long, the channel width was 2 ~ 3μm and the working wavelength was 1.51μm. The device is fabricated by a liquid-phase epitaxy step and a lateral Zn diffusion process, using a semi-insulating substrate material for current limiting.