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硅本身可被阳极处理,这一发现为集成电路更便宜、更高密度和更快速打开了一条意想不到的途径。在这步低温工艺中,产生为隔离芯片上有源元件所需的介质。因此,无论对于双极还是MOS都增加了介质隔离的优点。通常,器件隔离需要经过两次或三次温度超过1000℃的氧化和扩散步骤。而新的工艺则免除了这些和常常是运用两次掩模,这取决于电路设计。因而,它最终将不仅减少工艺过程中的能量耗费,而且也减少切割园片头尾损失25%的消耗。电路的复杂性也增加了,双极大规模集成电路集成度可以加倍。同样有意义的是,硅的阳极处理通过减小元件问的电容,改进了电路性能,并提高了晶体管增益和速度。在那些诸如I2L和低功耗肖特基晶体管-晶体管逻辑的新的双极电路形式中,这一改进特别显著。例如,改进了的I2L电路,电流增益提高了数十倍,而截止频率增加了五倍。在集成电路制造中,阳极处理并不是新工艺,现今许多电路的掩埋布线就是用阳极氧化铝。但是,以前硅本身从未被阳极处理转化为介质,其深度也不足以对集成电路进行隔离。
Silicon itself can be anodized, a finding that opens up an unexpected path for cheaper, more dense, and faster integrated circuits. In this cryogenic process, the media required to isolate the active components on the chip is produced. As a result, the benefits of dielectric isolation are added to both bipolar and MOS. In general, device isolation requires two or three oxidation and diffusion steps at temperatures in excess of 1000 ° C. The new process eliminates these and often uses two masks, depending on the circuit design. As a result, it will eventually not only reduce the energy costs of the process, but also reduce the head and tail loss of the cutting disc by 25%. The complexity of the circuit has also increased, and the integration of bipolar integrated circuits can be doubled. Equally significant, silicon anodization improves circuit performance and increases transistor gain and speed by reducing the elemental capacitance. This improvement is particularly significant in new bipolar circuit forms such as I2L and low-power Schottky-transistor logic. For example, the improved I2L circuit, the current gain increased tens of times, while the cut-off frequency increased fivefold. Anode processing is not a new process in the fabrication of integrated circuits, and the buried wiring in many circuits today uses anodized aluminum. However, silicon was never itself converted to dielectric by anodization and was not deep enough to isolate integrated circuits.