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建立了不同结构的InP基PIN型In0.53Ga0.47As探测器光响应的物理模型.通过引入收集效率函数,模拟计算了探测器量子效率和光响应.采用该模型分别研究了正面进光和背面进光情况下典型的In0.53Ga0.047As/InP PIN探测器的结构参数对器件量子效率的影响.在此基础上提出了两种改进的背照射InGaAs/InP探测器结构,并讨论了其结构参数的优化.
The physical model of optical response of InP-based In0.53Ga0.47As detector with different structures was established. The quantum efficiency and light response of the detector were simulated by introducing the collection efficiency function. The influence of the structural parameters of the typical In0.53Ga0.047As / InP PIN detector on the quantum efficiency of the device is illuminated.On the basis of this, two improved structures of back-illuminated InGaAs / InP detectors are proposed and their structure parameters Optimization.