论文部分内容阅读
我们用集总模型方法确定了复杂集成电路中的三维效应,电路的闭锁行为往往是受三维效应支配的。我们采用了一种预处理程序,该程序能根据对电路局部结构布局和物理的基本描述,自动地生成与SPICE程序相容的、元件数多达数千个的文件。模型的结果表明,对于非对称布局的器件来说,衬底和隔离阱中的内部电位降比由金属化层电阻引起的电位降要大得多。模型分析还表明,改变背面接触(例如部分地除去电路中间部分的背面接触,以进行激光背面模拟)可使衬底中的横向电压降提高一个数量级以上,从而显著地改变闭锁特性。我们的模型可用来计算对闭锁现象和闭锁窗口效应都具有重要影响的分布电位;在采用激光模拟的情况下,还可用术确定金属遮挡或非均匀载流子产生所造成的影响。
We use the lumped model method to determine the three-dimensional effect of complex integrated circuits, the circuit’s blocking behavior is often dominated by the three-dimensional effect. We use a preprocessing program that automatically generates SPICE-compatible files up to thousands of components based on a basic description of the layout and physics of the circuits. The model results show that for devices with asymmetric layout, the internal potential drop in the substrate and isolation well is much greater than the potential drop caused by the resistance of the metallization. Model analysis also shows that changing the backside contact (eg, partially removing the backside contact of the middle portion of the circuit for laser backside modeling) can increase the lateral voltage drop in the substrate by more than an order of magnitude, significantly changing the latching characteristics. Our model can be used to calculate the distribution potential that has a significant effect on both the blocking phenomenon and the blocking window effect; in the case of laser simulations, the effects of metal shielding or non-uniform carrier generation can also be determined.