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本文采用真空电子束蒸镀技术在多谱段ZnS衬底上沉积了适合金刚石膜沉积的致密陶瓷过渡层,并利用微波等离子体CVD金刚石膜低温沉积技术进行了金刚石膜沉积研究。发现在陶瓷过渡层上的金刚石形核极其困难,其原因可能是陶瓷涂层在沉积过程中龟裂导致ZnS蒸汽扩散逸出干扰金刚石形核所致。本文采用诱导形核技术在过渡层/ZnS试样表面观察到极高密度(1010/cm2)的金刚石形核,并对金刚石/过渡层/ZnS试样的红外透过特性进行了评价。
In this paper, vacuum electron beam deposition technique was used to deposit a dense ceramic transition layer suitable for deposition of diamond films on multi-band ZnS substrate. The deposition of diamond films by microwave plasma CVD diamond film was also studied. The diamond nucleation on the ceramic transition layer was found to be extremely difficult due to the fact that the cracking of the ceramic coating during the deposition led to the diffusion of the ZnS vapor escaping the diamond nucleation. In this paper, a very high density (1010 / cm2) diamond nucleation was observed on the surface of transitional layer / ZnS by inductive nucleation and the infrared transmission characteristics of diamond / transitional layer / ZnS samples were evaluated.