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据日本《O Plus E》1992年第157期报道,德国鲁尔大学和西门子中央研究所已共同研制成具有世界最高开关速度的硅电路,可望应用于未来的光通信网络。这种装置包括如下电路:(1)最高传输速度为12 Gbit/s,可供电流为40mA的激光驱动器;(2)最高速度为30～32Gbit/s的多路转换器和信号分离器(图略);(3)最高传输速度为22Gbit/s的判定电路。 目前,正在研究开发10Gbit/s传输速度的新一代光通信系统,而鲁尔大学和西门子共同开发组已成功地做到这一点。从技术上讲,在几年前,接收电路高速化仅仅考虑采用GaAs等化合物半导体,而随着硅技术的发展和实现最佳电路技术的成熟,越来越被人们重视,现已实现0.8μm的硅双极技术。由于这些晶体管是以目前已批量生产自对准双层多晶硅晶体管的技术为基础,故截止频率为25GHz。用该晶体管制作的IC可用于高频通讯机。
According to Japan’s “O Plus E” No. 157 of 1992, it is reported that Ruhr University in Germany and Siemens Central Research Institute have jointly developed the silicon circuit with the highest switching speed in the world and are expected to be applied to the future optical communication network. The device consists of the following circuits: (1) Laser drivers with a maximum transfer speed of 12 Gbit / s for a current of 40 mA; (2) Multiplexers and demultiplexers with a maximum speed of 30 to 32 Gbit / s Omitted); (3) the maximum transmission speed of 22Gbit / s decision circuit. Currently, a new generation of optical communication systems that are developing 10Gbit / s transmission speed is being studied, and the joint development team at Ruhr University and Siemens has successfully done so. Technically speaking, a few years ago, the high speed of the receiving circuit only considered the use of compound semiconductors such as GaAs. With the development of the silicon technology and the maturity of the best circuit technology, more and more attention has been paid, Silicon bipolar technology. Since these transistors are based on the technology of mass production of self-aligned double-layer polysilicon transistors, the cut-off frequency is 25 GHz. The IC made with this transistor can be used in high frequency communications.