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实验中在p-Ga N层制备单层密排的聚苯乙烯(PS)纳米球作为掩模,通过改变纳米球掩膜的直径,制作了周期性的占空比不同的Ga N纳米圆台阵列结构。实验结果表明,在归一化激发光功率后,p-Ga N层制备纳米圆台阵列的LED出光效率最高增加到参考样品的3.8倍。三维时域有限差分方法计算表明,周期性纳米结构破坏了p-Ga N表面的全反射,增大了LED结构的光输出临界角,从而提高LED的光致发光效率。此外,利用可变的纳米球掩模刻蚀技术,可以在同一个周期下优化纳米圆台的尺寸从而进一步提高LED的出光效率,这可以用等效折射率与薄膜透射率理论来解释,计算结果与实验结果比较一致。
In the experiment, a single layer of close-packed polystyrene (PS) nanosphere was prepared in the p-Ga N layer as a mask. By changing the diameter of the nanosphere mask, periodic array of GaN nanocluster with different duty cycles structure. The experimental results show that after normalized excitation power, the maximum LED output efficiency of p-Ga N layer prepared nanocluster array is 3.8 times that of the reference sample. The 3D FDTD method shows that the periodic nanostructures destroy the total reflection on the p-Ga N surface and increase the critical angle of the light output of the LED structure, thus improving the photoluminescence efficiency of the LED. In addition, the variable nanosphere mask etching technique can be used to optimize the size of the nano-circular table in the same cycle to further improve the LED light extraction efficiency, which can be explained by the equivalent refractive index and the film transmittance theory. The calculation result Compared with the experimental results.