基片加热下准分子激光诱导硅掺硼实验研究钱育军，童小梅，潘佰良，汪永江（浙江大学物理系，杭州３１００２７）制作ＰＮ结的传统方法是热扩散及离子注入，但装置复杂，步骤繁复。激光有着能量高度集中的优越性，故可以使半导体表面的极浅层迅速熔化，是一种较理想的材料... Experimental study on excimer laser-induced boron doped silicon under substrate heating Qian Yujun, Tong Xiaomei, Pan Bailiang, Wang Yongjiang (Department of Physics, Zhejiang University, Hangzhou 310027, China) The traditional methods of PN junction fabrication are thermal diffusion and ion implantation. However, Complicated steps. Laser has the advantages of high concentration of energy, so it can make the superficial layer of semiconductor surface melt quickly, which is an ideal material.