近几年来,由于汽车电子系统和高效率DC/DC转换器对大功率MOSFET提出了更多、更高的要求,在低压MOSFET的优化设计方面己经取得了很大的进展。对于60伏以下的MOSFET,利用意法半导体的STripFET技术或者其它公司的“沟道技术(TRENCH)”。己经实现了降低导通电阻和栅极电荷的目标。然而,这些方法很难用到电压 In recent years, great progress has been made in the optimization design of low-voltage MOSFETs due to the higher and higher requirements of high-power MOSFETs in automotive electronics and high-efficiency DC / DC converters. For 60-volt MOSFETs, use STMicroelectronics STripFET technology or other company’s “channel technology (TRENCH).” The goal of reducing on-resistance and gate charge has been achieved. However, these methods are difficult to use voltage