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介绍了In0.17Al0.83N在质量分数10%的四甲基氢氧化铵(TMAH)碱性溶液中的腐蚀行为实验研究。通过扫描电子显微镜(SEM)和原子力显微镜(AFM)观察腐蚀样品,发现其腐蚀机理是起源于晶体中线位错缺陷的侧向腐蚀。这是由于线位错在In0.17Al0.83N晶体表面的交汇处与周围晶体相比,具有较高的化学不稳定性,容易被腐蚀,形成缺陷腐蚀坑。随着腐蚀的进一步发生,暴露在腐蚀液中的腐蚀坑侧壁,更容易受到腐蚀,造成了以侧向腐蚀为主的腐蚀。AFM和SEM观察到的大多数腐蚀坑是与InAlN晶体中的螺位错、刃位错或混合位错有关。这种腐蚀方法适合在宽禁带半导体制造中以InAlN为牺牲层的工艺上应用。
The corrosion behavior of In0.17Al0.83N in alkaline solution containing 10% tetramethylammonium hydroxide (TMAH) was introduced. Corrosion samples were observed by scanning electron microscope (SEM) and atomic force microscope (AFM), and the corrosion mechanism was found to be lateral corrosion originating from dislocation defects in the crystal center line. This is because the line dislocation in the In0.17Al0.83N crystal surface at the junction with the surrounding crystal compared with high chemical instability, easy to be corroded, the formation of pit corrosion pit. With the further occurrence of corrosion, the side wall of the corrosion pit exposed in the etching solution is more likely to be corroded, resulting in corrosion mainly in the lateral direction. Most corrosion pits observed by AFM and SEM are related to screw dislocations, edge dislocations or mixed dislocations in InAlN crystals. This etching method is suitable for wide band gap semiconductor manufacturing process using InAlN sacrificial layer.