尽管半导体市场出现了萧条不景气的景象,然而固态研究规划却使其继续向前发展。尤其是微波研究人员在双极晶体管、场效应晶体管和二极管等几方面发展了半导体技术。新材料和改进后的制造技术可以制造出新型的俘越二极管、大功率X波段场效应晶体管和被装在一平方毫米基片上并具有电流源的高速差分放大器。当然,在这阶段中,这些器件的绝大部分还是实验室雏形,但这不正是二十五年前晶体管的状况吗? 过去的俘越二极管是传统的台式结构。现在出现了较优越的平面设计,普林斯顿RCA实验室的研究员已经成功地制造出p型和n型的平面俘越二极管,单个的和多元的 Despite the downturn in the semiconductor market, solid-state research plans keep it moving forward. Microwave researchers, in particular, have developed semiconductor technologies in the field of bipolar transistors, field-effect transistors and diodes. New materials and improved manufacturing techniques can create new captive diodes, high-power X-band FETs and high-speed differential amplifiers with a current source mounted on a square millimeter of substrate. Of course, the vast majority of these devices are still prototypes in this phase, but is not that exactly the case of a transistor twenty-five years ago? The past captive-diodes were traditional benchtop structures. Now that superior planar designs have emerged, researchers at RCA Laboratories in Princeton have succeeded in producing p-type and n-type planar captive diodes, both single and multiple