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随着Si片尺寸加大和特征尺寸的缩小,对Si片的洁净程度、表面的化学态以及表面缺陷等要求越来越高。针对300 mm 65 nm Cu互连晶片清洗后表面常出现边缘和辐射状污染的问题。在理论分析的基础上,研究了缩短化学药液喷射臂和去离子水喷射臂的间隔时间,实现不同喷射臂无间隔连续喷射技术,并优化化学药液喷射臂的摆臂速度、轨迹和起始终止角度等参数。采用北京七星华创电子股份有限公司自主研发的300 mm 65 nm Cu互连单片清洗机进行工艺实验,结果表明:清洗后晶片表面无边缘和辐射状污染,清洗后晶片表面临界颗粒直径0.12μm,临界颗粒数每片30个;临界尺寸变化不大于2%。
With the Si chip size and feature size of the shrinking, the Si chip cleanliness, the surface of the chemical state and surface defects and other requirements are getting higher and higher. Edge and radial contamination often appear on the surface of a 300 mm 65 nm Cu interconnect wafer. On the basis of theoretical analysis, we studied the shortening of the interval time between chemical spraying arm and deionized water spraying arm, realizing the continuous injection technology of different spraying arm without interval and optimizing the swing speed, trajectory and starting of chemical spraying arm Always angle and other parameters. A 300 mm 65 nm Cu interconnection monolithic washer developed by Beijing Seven Star Huachong Electronics Co., Ltd. was used to carry out the process experiment. The results show that the surface of the wafer after cleaning has no edge and radial pollution, and the critical particle diameter on the surface of the wafer after cleaning is 0.12 μm , The critical number of particles per piece 30; critical size changes of not more than 2%.