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研究了掺杂剂含量对电子束反应蒸发技术生长掺钼氧化铟(In2O3:Mo,IMO)薄膜的微观结构以及光学和电学性能的影响。采用高纯度In2O3:MoO3陶瓷靶和O2作为源材料。随着MoO3掺杂剂含量的增加,IMO薄膜电阻率先降低而后增加,光学性能呈现薄膜透过率下降的趋势。在1.0 wt.%MoO3掺杂剂含量时,获得最佳薄膜性能,薄膜电阻率ρ约为1.97×10-4Ω.cm,方块电阻Rs约为18Ω/□,载流子浓度n约为6.85×1020cm-3,电子迁移率μ约为46.3 cm2.V-1.s-1,可见光和近红外区域透过率T约为75%~85%(含玻璃衬底)。这种高迁移率的IMO薄膜有望应用于μc-Si:H薄膜太阳电池以及a-Si:H/μc-Si:H硅叠层薄膜太阳电池。
The effects of dopant content on the microstructure and optical and electrical properties of In2O3: Mo doped In2O3 thin films were investigated. Using high purity In2O3: MoO3 ceramic target and O2 as the source material. With the increase of the content of MoO3 dopant, the resistivity of IMO film first decreased and then increased, and the optical properties showed the tendency of the film transmittance decreased. Optimum film properties were obtained with a 1.0 wt.% MoO3 dopant content, the film resistivity ρ was about 1.97 × 10 -4 Ω · cm, the sheet resistance Rs was about 18 Ω / □, and the carrier concentration n was about 6.85 × 1020cm-3, the electron mobility μ is about 46.3cm2.V-1.s-1, the transmittance T in the visible and near infrared region is about 75% ~ 85% (including the glass substrate). This high mobility IMO film is expected to be applied to μc-Si: H thin film solar cells and a-Si: H / μc-Si: H silicon stacked thin film solar cells.