论文部分内容阅读
利用数值模拟方法,研究组份渐变电子阻挡层(EBL)对InGaN/GaN发光二极管电学和光学特性的影响。结果表明,三角形组份渐变EBL结构能有效减小器件的开启电压,提高光输出功率,改善高注入电流水平下发光效率的下降情况。能带模拟结果进一步表明,三角形组份渐变EBL结构显著提高了导带底的电子势垒,可有效限制电子向P型GaN层的泄露,同时减小了价带顶的空穴势垒,可增强P型GaN层的空穴向有源区的注入效率,改善其在量子阱内的浓度分布。
The influence of the graded electron blocking layer (EBL) on the electrical and optical properties of InGaN / GaN LEDs was studied by means of numerical simulation. The results show that the tapered EBL structure can effectively reduce the turn-on voltage of the device, increase the optical output power, and improve the decrease of the luminous efficiency under the high injection current level. The energy band simulation results further show that the triangular compositionally graded EBL structure significantly increases the electron barrier at the bottom of the conduction band and effectively limits the electron leakage to the P-type GaN layer while reducing the hole barrier at the top of the valence band. The injection efficiency of holes in the P-type GaN layer to the active region is enhanced, and the concentration distribution in the quantum well is improved.