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设计了适应于迫弹激光近炸引信的小体积、低电压、窄脉宽、高功率的脉冲半导体激光电源。采用电容充放电的模式,选用高速大功率MOSFET管作为开关,设计了相应的高速开关控制电路。激光电源模块的重复频率高达50 kHz,常规热电池供电电压条件下的输出脉冲激光峰值功率为9 W,光脉冲上升沿为4.2 ns,光脉宽为10 ns,为有效提高迫弹激光近炸引信定距精度和抗阳光、烟雾等干扰提供了保证。
The pulse semiconductor laser power supply with small volume, low voltage, narrow pulse width and high power, which is suitable for the bombing laser near fuze, is designed. Capacitor charging and discharging mode, the selection of high-speed high-power MOSFET as a switch, the design of the corresponding high-speed switching control circuit. The repetition frequency of the laser power module is up to 50 kHz. The peak power of the output pulse under conventional hot-battery supply voltage is 9 W, the rising edge of the light pulse is 4.2 ns and the light pulse width is 10 ns. In order to effectively improve the projectile laser near-explosion Fuze distance accuracy and resistance to sunlight, smoke and other interference provides a guarantee.