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HgCdTe固态再结晶技术主要包括合成 -淬火 -退火三个过程 ,文中对其中的合成工艺和淬火工艺进行改进 ,获得了较为满意的结果。用这种方法制备的HgCdTe材料单晶大、组份均匀、结构完整、电学参数好 ,并已做出多种高性能红外探测器。
HgCdTe solid state recrystallization technology mainly includes three processes of synthesis-quenching-annealing. The synthesis process and quenching process are improved in this paper, and the satisfactory results are obtained. The HgCdTe material prepared by this method has a large single crystal, uniform composition, complete structure and good electrical parameters. A variety of high-performance infrared detectors have been made.