Vishay推出两款20V和两款30V n通道器件,从而扩展其第三代TrenchFET功率MOSFET系列。这些器件首次采用TurboFET技术,利用新电荷平衡漏结构将栅极电荷降低多达45%,从而大幅降低切换损耗及提高切换速度。20V器件包括SiS426DN和SiR496DP,其中SiS426DN器件采用尺寸3mm×3mm的PowerP Vishay has introduced two 20V and two 30V n-channel devices to expand its third-generation TrenchFET power MOSFET family. For the first time, these devices use TurboFET technology to reduce gate charge by up to 45% with the new charge-balanced drain structure, dramatically reducing switching losses and increasing switching speed. 20V devices include SiS426DN and SiR496DP, SiS426DN devices which use size 3mm × 3mm PowerP