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美国模拟器件公司近日发布了一种创新的半导体制造工艺ICMOS,它是将高电压半导体工艺与亚微米CMOS和互补双极型工艺相结合,它使诸如工业自动化和过程控制等高电压应用在性能、设计和节省成本方面达到了空前的水平。与采用传统CMOS制造工艺不同,按照iCMOS工业制造工艺制造的模拟IC 能承受高达30 V电源电压,同时能提供突破的性能水平,降低系统设计成本,而且降低85%的功耗和减小30%的封装尺寸。
Analog Devices recently released ICMOS, an innovative semiconductor manufacturing process that combines high-voltage semiconductor processes with sub-micron CMOS and complementary bipolar processes that enable high-voltage applications such as industrial automation and process control in performance , Design and cost savings reached an all-time high. Unlike traditional CMOS manufacturing processes, analog ICs fabricated in the iCMOS industrial manufacturing process can withstand supply voltages up to 30 V while providing breakthrough performance levels, reducing system design costs, and reducing power consumption by 85% and by 30% The package size.