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本文描述了紫外、x射线电子束及离子束光刻中分辨率、套刻精度及视场的限制。在讨论中得出如下结论:1)对1μm宽的线条,光学投影的对比度比电子束的对比度可能更高;2)采用反射式光学系统及远紫外可生产接近0.5μm的线条;3)为比较电子束和光学系统的分辨率,可将最小线宽定义为曝光系统的对比度降至30％时的线宽的两倍;4)线宽在0.1μm以上时,x射线光刻能提供最大的抗蚀剂厚宽比和最高的对比度,而对0.1μm以下的图形最大的厚宽比是用电子束曝光得到的;5)用电子束在基体试样中曝光,只要抗蚀剂层很薄,对50nm的线宽和1μm的线宽来说,对比度是相同的。较高的加速电压使校正邻近效应和保持原抗蚀剂的分辨率更容易;6)最后,正如光电子的射程限制了x射线光刻的分辨率一样,二次电子的射程限制了电子束光刻的分辨率。在以上两种情况下,致密图形中的最小线宽和间隔约为20nm,用离子束光刻时,分辨率也可能相同,因为离子的相互作用范围与电子是类似的。
This article describes the UV, x-ray beam and ion beam lithography resolution, overlay accuracy and field of view restrictions. The conclusions reached in the discussion are as follows: 1) for 1 μm wide lines, the contrast of the optical projection may be higher than the contrast of the electron beam; 2) reflective optical systems and far ultraviolet produce lines close to 0.5 μm; 3) Comparing the resolution of the electron beam and optical system, the minimum linewidth can be defined as twice the linewidth when the contrast of the exposure system is reduced to 30%; 4) x-ray lithography provides the largest And the highest contrast ratio, and the largest aspect ratio for patterns below 0.1 [mu] m is obtained by electron beam exposure; 5) exposing the substrate sample with an electron beam as long as the resist layer is very Thin, the contrast is the same for 50 nm line width and 1 μm line width. The higher accelerating voltage makes it easier to correct the proximity effect and maintain the resolution of the original resist; 6) Finally, just as the photoelectron’s range limits the resolution of x-ray lithography, the range of secondary electrons limits the electron beam Engraved resolution. In both cases, the minimum line width and spacing in a dense pattern is about 20 nm, and the resolution may be the same for ion beam lithography, because the range of ion interactions is similar to that of electrons.