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用正电子湮没寿命技术研究了注量为 1 6× 10 16 cm- 2 的 85MeV 19F离子辐照InP产生的辐照效应。实验表明辐照在InP中产生单空位型缺陷
The positron annihilation lifetime technique was used to study the effect of irradiation on InP produced by 85 MeV 19F ion implantation at a dose of 1 × 10 16 cm -2. Experiments show that irradiation produces single vacancy defects in InP