论文部分内容阅读
利用分子束外延（MBE）方法研制出了高质量的InGaAs／AlGaAs应变量子阱激光器外延材料，其最低的阈值电流密度可达到120A／cm2，激发波长在980nm左右。获得了高性能的适合于掺饵光纤放大器用的980nm量子阱激光器泵浦源，其典型的阈值电流为15mA，外微分量子效率的典型值和最好值分别为0．8mW／mA和1．0mW／mA，线性输出功率大于120mW，在20℃一50℃的特征温度T0为125K。器件在59℃，80mW下的恒功率老化实验表明具有较好的可靠性，与掺铒单模光纤耦合的组合件出纤功率可达63mW。
High quality InGaAs / AlGaAs strained quantum well laser epitaxial materials have been developed by molecular beam epitaxy (MBE) with the lowest threshold current density of 120A / cm2 and excitation wavelength of 980nm. A high performance 980 nm QW laser source suitable for an erbium doped fiber amplifier is obtained with a typical threshold current of 15 mA and a typical and optimum extrinsic differential quantum efficiency of 0.8 mW / mA and 1, respectively. 0mW / mA, the linear output power is greater than 120mW, the characteristic temperature T0 at 20 ℃ -50 ℃ is 125K. The constant power aging experiment at 59 ℃ and 80mW shows that the device has good reliability. The output power of the device coupled with erbium-doped single-mode fiber can reach 63mW.